Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters
Identifieur interne : 000F02 ( Russie/Analysis ); précédent : 000F01; suivant : 000F03Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters
Auteurs : RBID : Pascal:98-0184694Descripteurs français
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English descriptors
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Abstract
We have used scanning tunneling microscopy and scanning tunneling spectroscopy at liquid helium temperature to study the electronic structure of in situ cleaved, (110) oriented surfaces of InAs single crystals. Both unperturbed, atomically flat areas and areas with an atomic-size defect cluster have been investigated. We show that the anomalous behavior of the local tunneling conductivity, which indicates a pronounced enhancement of the semiconductor band gap for the flat areas, is consistent with band bending induced by charges localized at the apex of the tip. Atomic-size defect clusters contain additional charges which modify the band bending; this explains the different behavior of the tunneling conductivity near the defect cluster. The experimentally observed oscillations of the tunneling conductivity near the band gap edges can be directly related to resonant tunneling through quantized surface states which appear because of the band bending. © 1998 American Institute of Physics.
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Pascal:98-0184694Le document en format XML
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<author><name sortKey="Maslova, N S" uniqKey="Maslova N">N. S. Maslova</name>
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<author><name sortKey="Panov, V I" uniqKey="Panov V">V. I. Panov</name>
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<author><name sortKey="Savinov, S V" uniqKey="Savinov S">S. V. Savinov</name>
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<author><name sortKey="Depuydt, A" uniqKey="Depuydt A">A. Depuydt</name>
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<front><div type="abstract" xml:lang="en">We have used scanning tunneling microscopy and scanning tunneling spectroscopy at liquid helium temperature to study the electronic structure of in situ cleaved, (110) oriented surfaces of InAs single crystals. Both unperturbed, atomically flat areas and areas with an atomic-size defect cluster have been investigated. We show that the anomalous behavior of the local tunneling conductivity, which indicates a pronounced enhancement of the semiconductor band gap for the flat areas, is consistent with band bending induced by charges localized at the apex of the tip. Atomic-size defect clusters contain additional charges which modify the band bending; this explains the different behavior of the tunneling conductivity near the defect cluster. The experimentally observed oscillations of the tunneling conductivity near the band gap edges can be directly related to resonant tunneling through quantized surface states which appear because of the band bending. © 1998 American Institute of Physics.</div>
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<fA11 i1="01" i2="1"><s1>MASLOVA (N. S.)</s1>
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<fA11 i1="02" i2="1"><s1>ORESHKIN (S. I.)</s1>
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<fA11 i1="06" i2="1"><s1>VAN HAESENDONCK (C.)</s1>
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<fA14 i1="01"><s1>Chair of Quantum Radio Physics, Moscow State University, 119899 Moscow, Russia</s1>
<sZ>1 aut.</sZ>
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